What is the Breakdown Region of a FET Transistor?

Breakdown Region of a FET Transistor

The Breakdown Region of a FET transistor is the region where the drain of the transistor receives too much voltage which causes the drain-source channel to breakdwown and the drain current, ID drastically increases.

The breakdown region is the last section (to the right) of the FET characteristics curve in which the drain-source voltage, VDS increases too much for the channel to handle. At this point, the FET loses its ability to resist current because too much voltage is applied across the drain-source terminal.

You can also see that the farther the voltage, VGS, is from the 0V range, where the maximum drain current ID occurs, the earlier the breakdown region occurs.

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